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M10 10BB TOPCon Solar Cell

182mm TOPCon solar cell
N type M10 TOPCon solar cell

M10 10BB TOPCon Solar Cell

  • Dimensions :

    182mmx182mm±0.5mm,Φ 247mm±0.5mm
  • Thickness :

    140μm± 14μm 、130μm± 13μm
  • Front (-) :

    10 busbars ,14 pads ,150 fingers ,busbar width 0.036±0.02mm
  • Back (+) :

    10 busbars ,14pads ,150fingers , busbar width 0.036±0.02mm

   

What is TOPCon Technology?

     

   The full name of TOPCON is Tunnel Oxide Passivating Contacts,  which is an N-type silicon wafer cell technology. TOPCon cells, namely tunneled oxide passivation contact solar cells, aim to improve solar cell efficiency by solving the problem of passivation contact of cell carrier selection.

    The front surface of TOPCON cell has the same structure as that of conventional N-type solar cells, the main difference is to prepare a layer of ultra-thin silicon oxide on the back of the battery, and then deposit a thin layer of doped silicon, which together form a passivation contact structure, effectively reducing surface composite and metal contact composite.

    Due to the good passivation effect of ultra-thin silicon oxide and heavy doped silicon film, the surface band of the silicon wafer is bent, thereby forming a field passivation effect, the probability of electron tunneling is greatly increased, the contact resistance is reduced, and the conversion efficiency is finally improved.

           

 

Engineering Drawing (mm )                

                   

 

 Light intensity reliability

 Intensity(W/m²)

1000

900

800

600

400

Uoc

1.0 0.996 0.991 0.988 0.962

Isc

1.0 0.903 0.803 0.602 0.403
* Taking the Voc(Isc) tested at 1000W/m² as the standard, test the decrease of Voc (Isc) with the light intensity.

 

 

 

Solderability                                                                                                      IV curve  

Minimum peeling strength

≥0.5N/mm

Results may vary depending on electrode, welding method, and conditions.

 

Electrical performance distribution         

Efficiency
Eff(%)
Maximum output
power
Pmpp(W)
Maximumpower
point current
Impp(A)
Short-circuit
current
Isc(A)
Maximum power
point voltage
Vmpp(V)
Open-circuit voltage
Voc(V)
>25.5
8.42
13.651
14.218
0.6168
0.7178
25.4~25.5
8.38
13.606
14. 183
0.6159
0.7169
25.3~25.4
8.35
13.577
14. 148
0.615
0.716
25.2~25.3
8.32
13.553
14. 113
0.6141
0.7151
25. 1~25.2
8.29
13.518
14.078
0.6131
0.7141
25.0~25. 1
8.25
13.475
14.035
0.6122
0.7132
24.9~25.0
8.22
13.440
14.001
0.6114
0.7124
24.8~24.9
8. 19
13.405
13.965
0.6106
0.7116
24.7~24.8
8. 16
13.370
13.93
0.6097
0.7107
24.6~24.7
8. 12
13.335
13.895
0.6089
0.7099
24.5~24.6
8.09
13.300
13.86
0.6081
0.7091
24.4~24.5
8.06
13.265
13.825
0.6073
0.7083
24.3~24.4
8.02
13.230
13.79
0.6065
0.7075
24.2~24.3
7.99
13. 195
13.755
0.6059
0.7069
24. 1~24.2
7.96
13. 155
13.715
0.6054
0.7064
24.0~24. 1
7.92
 
13. 115
13.675
0.604
0.705
23.9~24.0
7.89
 
13.080
13.64
0.6032
0.7042
23.8~23.9
7.86
 
13.055
13.615
0.6024
0.7034
23.7~23.8
7.82
 
13.006
13.581
0.6016
0.7023
23.6~23.7
7.79
12.968
13.543
0.6008
0.7012
23.5~23.6
7.76
 
12.931
 
13.501
0.6000
0.7004
23.4~23.5
 
7.73
 
12.893
 
13.478
0.5992
0.6987
23.3~23.4
7.69
 
12.855
13.432
0.5984
0.698
23.2~23.3
7.66
12.817
13.3919
0.5976
0.6971
23. 1~23.2
7.63
12.779
13.347
0.5968
0.6964
23.0~23. 1
7.59
12.740
13.303
0.5960
0.6957
22.9~23.0
7.56
 
12.702
 
13.260
0.5952
0.695
22.8~22.9
7.53
 
12.664
13.2178
0.5944
0.6942
Standard test conditions:1000W/m², AM1.5, 25. The above technical parameters are subject to technical changes and
tests.   All data contained in this datasheet is subject to change without notice.

 

               

     

                    

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