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182mm 16BB N-type TOPCon Monocrystalline Solar Cell

TOPCon M10 16BB solar cell
N type M10 TOPCon solar cell

182mm 16BB N-type TOPCon Monocrystalline Solar Cell

  • Dimensions :

    182mmx182mm±0.5mm, Φ 247.28mm±0.5mm
  • Thickness :

    130μm±13μm, 120μm±12μm
  • Front (-) :

    16 busbars, 12 pads, 144 fingers, busbar width 0.036±0.02mm
  • Back (+) :

    16 busbars, 12 pads, 146 fingers, busbar width 0.036±0.02mm

   

Introduction of TOPCon Technology

     The full name of TOPCON is Tunnel Oxide Passivating Contacts,  which is an N-type silicon wafer cell technology. TOPCon cells, namely tunneled oxide passivation contact solar cells, aim to improve solar cell efficiency by solving the problem of passivation contact of cell carrier selection.

    The front surface of TOPCON cell has the same structure as that of conventional N-type solar cells, the main difference is to prepare a layer of ultra-thin silicon oxide on the back of the battery, and then deposit a thin layer of doped silicon, which together form a passivation contact structure, effectively reducing surface composite and metal contact composite.

    Due to the good passivation effect of ultra-thin silicon oxide and heavy doped silicon film, the surface band of the silicon wafer is bent, thereby forming a field passivation effect, the probability of electron tunneling is greatly increased, the contact resistance is reduced, and the conversion efficiency is finally improved.

           

 

 

 

 

Engineering Drawing (mm ) 

                                         

 

Light intensity reliability

Intensity(W/m²) 1000 900 800 600 400
Uoc 1 0.996 0.991 0.988 0.962
Isc 1 0.903 0.803 0.602 0.403
* Taking the Voc(Isc) tested at 1000W/m虏 as the standard, test the decrease of Voc (Isc) with the light intensity.

           

 

 

IV curve                                                                                                                                    Spectral Response 

 

                   

Front electrical performance distribution         

Efficiency
Eff(%)
Maximum
output power
Pmpp(W)

Maximum

power
point voltage
Vmpp(V)

Maximum

power
point current
Impp(A)

Open-circuit
voltage
Voc(V)
Short-
circuit
current
Isc(A)
>25.5 8.42 0.6168 13.651 0.7178 14.218
25.4~25.5 8.38 0.6159 13.606 0.7169 14.183
25.3~25.4 8.35 0.615 13.577 0.716 14.148
25.2~25.3 8.32 0.6141 13.553 0.7151 14.113
25.1~25.2 8.29 0.6131 13.518 0.7141 14.078
25.0~25.1 8.25 0.6122 13.475 0.7132 14.035
24.9~25.0 8.22 0.6114 13.44 0.7124 14.001
24.8~24.9 8.19 0.6106 13.405 0.7116 13.965
24.7~24.8 8.16 0.6097 13.37 0.7107 13.93
24.6~24.7 8.12 0.6089 13.335 0.7099 13.895
24.5~24.6 8.09 0.6081 13.3 0.7091 13.86
24.4~24.5 8.06 0.6073 13.265 0.7083 13.825
24.3~24.4 8.02 0.6065 13.23 0.7075 13.79
24.2~24.3 7.99 0.6059 13.195 0.7069 13.755
24.1~24.2 7.96 0.6054 13.155 0.7064 13.715
24.0~24.1 7.92 0.604 13.115 0.705 13.675
23.9~24.0 7.89 0.6032 13.08 0.7042 13.64
23.8~23.9 7.86 0.6024 13.055 0.7034 13.615
23.7~23.8 7.82 0.6016 13.006 0.7023 13.581
23.6~23.7 7.79 0.6008  12.968 0.7012 13.543
23.5~23.6 7.76 0.6000  12.931 0.7004 13.501
23.4~23.5 7.73 0.5992  12.893 0.6987 13.478
23.3~23.4 7.69 0.5984  12.855 0.698 13.432
23.2~23.3 7.66 0.5976   12.817 0.6971 13.392
23.1~23.2 7.63 0.5968  12.779 0.6964 13.347
23.0~23.1 7.59 0.5960  12.74 0.6957 13.303
22.9~23.0 7.56 0.5952  12.702 0.695 13.26
22.8~22.9 7.53 0.5944  12.664 0.6942 13.218

Standard test conditions:1000W/m², AM1.5, 25. The above technical parameters are subject to technical changes

and tests.All data contained in this datasheet is subject to change without notice.

 

 

                    

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