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182mm 16BB TOPCon Solar Cell

N type M10 TOPCon solar cell

182mm 16BB TOPCon Solar Cell

  • Dimensions :

    182mm*182mm±0.5mm,Φ247mm±0.5mm
  • Thickness :

    130±20µm
  • Front (-) :

    16*0.036±0.02mm busbar (silver),132 Fingers, Blue (dark blue)
  • Back (+) :

    16*0.036±0.02mm busbar (silver),130 Fingers, Blue (dark blue)

   

Introduction of TOPCon Technology

     The full name of TOPCON is Tunnel Oxide Passivating Contacts,  which is an N-type silicon wafer cell technology. TOPCon cells, namely tunneled oxide passivation contact solar cells, aim to improve solar cell efficiency by solving the problem of passivation contact of cell carrier selection.

    The front surface of TOPCON cell has the same structure as that of conventional N-type solar cells, the main difference is to prepare a layer of ultra-thin silicon oxide on the back of the battery, and then deposit a thin layer of doped silicon, which together form a passivation contact structure, effectively reducing surface composite and metal contact composite.

    Due to the good passivation effect of ultra-thin silicon oxide and heavy doped silicon film, the surface band of the silicon wafer is bent, thereby forming a field passivation effect, the probability of electron tunneling is greatly increased, the contact resistance is reduced, and the conversion efficiency is finally improved.

           

 

Engineering Drawing (mm )  

                                     

 

 Light intensity reliability

 Intensity(W/m²)

1000

900

800

600

400

Uoc

1.0 0.996 0.991 0.988 0.962

Isc

1.0 0.903 0.803 0.602 0.403
* Taking the Voc(Isc) tested at 1000W/m² as the standard, test the decrease of Voc (Isc) with the light intensity.

 

           

Solderability                                                                                                     IV curve  

Minimum peeling strength

≥0.5N/mm

Results may vary depending on electrode, welding method, and conditions.

 

 

Front electrical performance distribution         

Efficiency
code
Efficiency
Eff(%)
Maximum
output power
Pmpp(W)
Maximum power
point voltage
Vmpp(V)
Maximumpower
point current
Impp(A)
Open-circuit
voltage
Voc(V)
Short-
circuit
current
Isc(A)
Fill factor
FF(%)
GT-182M-247
24.7
8.155
0.622
13.111
0.712
13.787
83.11
GT-182M-246
24.6
8.122
0.620
13.091
0.711
13.776
83.03
GT-182M-245
24.5
8.089
0.619
13.068
0.709
13.759
82.92
GT-182M-244
24.4
8.056
0.617
13.031
0.707
13.755
82.81
GT-182M-243
24.3
8.023
0.617
12.999
0.705
13.752
82.72
GT-182M-242
24.2
7.990
0.615
12.992
0.703
13.750
82.62
GT-182M-241
24.1
7.957
0.614
12.960
0.701
13.734
82.59
GT-182M-240
24.0
7.924
0.612
12.948
0.699
13.730
82.53
GT-182M-239
23.9
7.891
0.610
12.936
0.698
13.707
82.44
GT-182M-238
23.8
7.858
0.608
12.925
0.697
13.687
82.35
 GT-182M-237
 23.7
 7.825
0.606
12.913
0.696
13.663
82.26
GT-182M-236
23.6
7.792
0.604
12.901
0.695
13.643
82.14
GT-182M-235
23.5
7.759
0.602
12.889
0.694
13.615
82.09
GT-182M-234
23.4
7.726
0.600
12.877
0.693
13.592
81.99
GT-182M-233
23.3
7.693
0.598
12.865
0.692
13.577
81.85

 

               

Back electrical performance distribution

Efficiency
code
Efficiency
Eff(%)
Maximum output
power
Pmpp(W)
Maximum
output voltage
Umpp(V)
Maximum
output current
Impp(A)
Open-circuit
voltage
Voc(V)
Short-circuit
current
Isc(A)
GT-182M-20.3
>20.5%
6.703
0.586
11.43
0.692
12.734
GT-182M-20.2
20.3%-20.5%
6.670
0.585
11.41
0.691
12.690
GT-182M-20.1
20.1%-20.3%
6.637
0.584
11.37
0.690
12.645
GT-182M-20.0
<20.1%
6.604
0.582
11.34
0.689
12.625
 Standard test conditions:1000W/m², AM1.5, 25. The above technical parameters are subject to technical changes and tests.
 All data contained in this datasheet is subject to change without notice.

 

                    

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