Dimensions :
182mm*182mm±0.5mm，Φ247mm±0.5mmThickness :
130±20µmFront (-) :
16*0.036±0.02mm busbar (silver)，132 Fingers, Blue (dark blue)Back (+) :
16*0.036±0.02mm busbar (silver)，130 Fingers, Blue (dark blue)
Introduction of TOPCon Technology
The full name of TOPCON is Tunnel Oxide Passivating Contacts, which is an N-type silicon wafer cell technology. TOPCon cells, namely tunneled oxide passivation contact solar cells, aim to improve solar cell efficiency by solving the problem of passivation contact of cell carrier selection.
The front surface of TOPCON cell has the same structure as that of conventional N-type solar cells, the main difference is to prepare a layer of ultra-thin silicon oxide on the back of the battery, and then deposit a thin layer of doped silicon, which together form a passivation contact structure, effectively reducing surface composite and metal contact composite.
Due to the good passivation effect of ultra-thin silicon oxide and heavy doped silicon film, the surface band of the silicon wafer is bent, thereby forming a field passivation effect, the probability of electron tunneling is greatly increased, the contact resistance is reduced, and the conversion efficiency is finally improved.
Engineering Drawing (mm )
Light intensity reliability
|
Intensity(W/m²) |
1000 |
900 |
800 |
600 |
400 |
|
Uoc |
1.0 | 0.996 | 0.991 | 0.988 | 0.962 |
|
Isc |
1.0 | 0.903 | 0.803 | 0.602 | 0.403 |
| * Taking the Voc(Isc) tested at 1000W/m² as the standard, test the decrease of Voc (Isc) with the light intensity. | |||||
Solderability IV curve
|
Minimum peeling strength |
≥0.5N/mm |
|
Results may vary depending on electrode, welding method, and conditions. |
|
Front electrical performance distribution
|
Efficiency
code
|
Efficiency
Eff(%)
|
Maximum
output power
Pmpp(W)
|
Maximum power
point voltage
Vmpp(V)
|
Maximumpower
point current
Impp(A)
|
Open-circuit
voltage
Voc(V)
|
Short-
circuit
current
Isc(A)
|
Fill factor
FF(%)
|
|
GT-182M-247
|
24.7
|
8.155
|
0.622
|
13.111
|
0.712
|
13.787
|
83.11
|
|
GT-182M-246
|
24.6
|
8.122
|
0.620
|
13.091
|
0.711
|
13.776
|
83.03
|
|
GT-182M-245
|
24.5
|
8.089
|
0.619
|
13.068
|
0.709
|
13.759
|
82.92
|
|
GT-182M-244
|
24.4
|
8.056
|
0.617
|
13.031
|
0.707
|
13.755
|
82.81
|
|
GT-182M-243
|
24.3
|
8.023
|
0.617
|
12.999
|
0.705
|
13.752
|
82.72
|
|
GT-182M-242
|
24.2
|
7.990
|
0.615
|
12.992
|
0.703
|
13.750
|
82.62
|
|
GT-182M-241
|
24.1
|
7.957
|
0.614
|
12.960
|
0.701
|
13.734
|
82.59
|
|
GT-182M-240
|
24.0
|
7.924
|
0.612
|
12.948
|
0.699
|
13.730
|
82.53
|
|
GT-182M-239
|
23.9
|
7.891
|
0.610
|
12.936
|
0.698
|
13.707
|
82.44
|
|
GT-182M-238
|
23.8
|
7.858
|
0.608
|
12.925
|
0.697
|
13.687
|
82.35
|
|
GT-182M-237
|
23.7
|
7.825
|
0.606
|
12.913
|
0.696
|
13.663
|
82.26
|
|
GT-182M-236
|
23.6
|
7.792
|
0.604
|
12.901
|
0.695
|
13.643
|
82.14
|
|
GT-182M-235
|
23.5
|
7.759
|
0.602
|
12.889
|
0.694
|
13.615
|
82.09
|
|
GT-182M-234
|
23.4
|
7.726
|
0.600
|
12.877
|
0.693
|
13.592
|
81.99
|
|
GT-182M-233
|
23.3
|
7.693
|
0.598
|
12.865
|
0.692
|
13.577
|
81.85
|
Back electrical performance distribution
|
Efficiency
code
|
Efficiency
Eff(%)
|
Maximum output
power
Pmpp(W)
|
Maximum
output voltage
Umpp(V)
|
Maximum
output current
Impp(A)
|
Open-circuit
voltage
Voc(V)
|
Short-circuit
current
Isc(A)
|
|
GT-182M-20.3
|
>20.5%
|
6.703
|
0.586
|
11.43
|
0.692
|
12.734
|
|
GT-182M-20.2
|
20.3%-20.5%
|
6.670
|
0.585
|
11.41
|
0.691
|
12.690
|
|
GT-182M-20.1
|
20.1%-20.3%
|
6.637
|
0.584
|
11.37
|
0.690
|
12.645
|
|
GT-182M-20.0
|
<20.1%
|
6.604
|
0.582
|
11.34
|
0.689
|
12.625
|
|
Standard test conditions:1000W/m², AM1.5, 25℃. The above technical parameters are subject to technical changes and tests.
All data contained in this datasheet is subject to change without notice.
|
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