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G12R 210R 16BB TOPCon Solar Cell

G12R 210R 16BB TOPCon Solar Cell

G12R 210R 16BB TOPCon Solar Cell

  • Dimensions :

    182mmx210mm±0.5mm,Φ 270.6mm±0.5mm
  • Thickness :

    130μm± 20μm
  • Front (-) :

    16 busbars,Blue (dark blue) anti-reflecting coating (SiNx)
  • Back (+) :

    16 busbars ,Blue (dark blue) anti-reflecting coating (SiNx)

   

What is TOPCon Technology?

     

   The full name of TOPCON is Tunnel Oxide Passivating Contacts,  which is an N-type silicon wafer cell technology. TOPCon cells, namely tunneled oxide passivation contact solar cells, aim to improve solar cell efficiency by solving the problem of passivation contact of cell carrier selection.

    The front surface of TOPCON cell has the same structure as that of conventional N-type solar cells, the main difference is to prepare a layer of ultra-thin silicon oxide on the back of the battery, and then deposit a thin layer of doped silicon, which together form a passivation contact structure, effectively reducing surface composite and metal contact composite.

    Due to the good passivation effect of ultra-thin silicon oxide and heavy doped silicon film, the surface band of the silicon wafer is bent, thereby forming a field passivation effect, the probability of electron tunneling is greatly increased, the contact resistance is reduced, and the conversion efficiency is finally improved.

           

 

Engineering Drawing (mm )                

                   

 

 Light intensity reliability

 Intensity(W/m²)

1000

900

800

600

400

Uoc

1.0 0.996 0.991 0.988 0.962

Isc

1.0 0.903 0.803 0.602 0.403
* Taking the Voc(Isc) tested at 1000W/m² as the standard, test the decrease of Voc (Isc) with the light intensity.

 

 

 

Solderability                                                                                                      IV curve  

Minimum peeling strength

≥0.5N/mm

Results may vary depending on electrode, welding method, and conditions.

 

Electrical performance distribution         

Efficiency
Eff(%)
Maximum output
power
Pmpp(W)
Maximumpower
point current
Impp(A)
Short-circuit
current
Isc(A)
Maximum power
point voltage
Vmpp(V)
Open-circuit voltage
Voc(V)
25.5
9.76
15.143
15.846
0.6443
0.7156
25.4
9.72
15.134 15.840
0.6442
0.7139
25.3
9.68
15.129 15.838
0.6399
0.7123
25.2
9.64
15.123 15.835
0.6377
0.7108
25. 1
9.60
15.113
15.833
0.6355
0.7089
25.0
9.57
15.103
15.826
0.6335
0.7073
24.9
9.53
15.096 15.823
0.6313
0.7065
24.8
9.49
15.093 15.821
0.6286
0.7034
24.7
9.45
15.084
15.815
0.6260
0.7033
24.6
9.42
15.087 15.814
0.6241
0.7019
24.5
9.37
15.045
15.788
0.6228
0.6997
24.4
9.33
15.009
15.769
0.6216
0.6984
24.3
9.29
14.972 15.749
0.6205
0.6970
Standard test conditions:1000W/m², AM1.5, 25. The above technical parameters are subject to technical changes and
tests.   All data contained in this datasheet is subject to change without notice.

 

               

     

                    

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