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210mm 18BB N-type TOPCon Solar Cell

210mm TOPCon solar cell
TOPCon M12 18BB solar cell

210mm 18BB N-type TOPCon Solar Cell

  • Dimensions :

    210mmx210mm±0.25mm, Φ 295mm±0.25mm
  • Thickness :

    150μm±20μm
  • Front (-) :

    18 busbars, 12 pads, 148fingers, busbar width 0.045±0.02mm
  • Back (+) :

    18 busbars, 12 pads, 140 fingers, busbar width 0.045±0.02mm

   

Introduction of  TOPCon Technology

     The full name of TOPCON is Tunnel Oxide Passivating Contacts,  which is an N-type silicon wafer cell technology. TOPCon cells, namely tunneled oxide passivation contact solar cells, aim to improve solar cell efficiency by solving the problem of passivation contact of cell carrier selection.

    The front surface of TOPCON cell has the same structure as that of conventional N-type solar cells, the main difference is to prepare a layer of ultra-thin silicon oxide on the back of the battery, and then deposit a thin layer of doped silicon, which together form a passivation contact structure, effectively reducing surface composite and metal contact composite.

    Due to the good passivation effect of ultra-thin silicon oxide and heavy doped silicon film, the surface band of the silicon wafer is bent, thereby forming a field passivation effect, the probability of electron tunneling is greatly increased, the contact resistance is reduced, and the conversion efficiency is finally improved.

           

       

 

Engineering Drawing(mm)               

                                

 

Light intensity reliability

 Intensity(W/m²)

1000

900

800

600

400

Uoc

1.0 0.996 0.991 0.988 0.962

Isc

1.0 0.903 0.803 0.602 0.403
* Taking the Voc(Isc) tested at 1000W/m² as the standard, test the decrease of Voc (Isc) with the light intensity.

 

             

  

IV curve                                                                                                                                        Spectral Response 

                   

 

                   

Electrical performance distribution         

Efficiency
Eff(%)
Maximum
output power
Pmpp(W)
Maximum power
point voltage
Vmpp(V)
Maximumpower
point current
Impp(A)
Open-circuit
voltage
Voc(V)
Short-
circuit
current
Isc(A)
FF(%)
24.5
10.800
0.620
17.429
0.714
18.197
83.13
24.4
10.748
0.619
17.358
0.712
18.180
83.08
24.3
10.715
0.618
17.351
0.711
18.180
82.84
24.2
10.671
0.617
17.285
0.711
18.162
82.68
24.1
10.626
0.613
17.349
0.710
18.128
82.58
24.0
10.582
0.611
17.317
0.709
18.110
82.40
23.9
10.544
0.610
17.289
0.708
18.091
82.27
23.8
10.497
0.608
17.271
0.707
18.057
82.24
23.7
10.450
0.605
17.271
0.705
18.039
82.12
23.6
10.406
0.604
17.230
0.704
18.022
81.97
23.5
10.362
0.602
17.203
0.703
18.005
81.80
23.4
10.317
0.601
17.173
0.702
17.970
81.77
23.3
10.274
0.600
17.119
0.701
17.935
81.71
23.2
10.232
0.599
17.075
0.700
17.935
81.47
23.1
10.184
0.597
17.060
0.699
17.899
81.43
23.0
10.142
0.596
17.015
0.698
17.882
81.23
Standard test conditions:1000W/m², AM1.5, 25. The above technical parameters are subject to technical changes and tests.
All data contained in this datasheet is subject to change without notice.
 
 
 

 

               

 

 

                    

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