In order to unleash the full performance of silicon heterojunction solar cells, parasitic losses need to be reduced. Researchers have developed an industrial-scale high-frequency plasma-enhanced chemical vapor deposition system.

1) The system has a minimized standing wave effect and is capable of depositing doped nc-SiOx:H with excellent electron selectivity, low parasitic absorption, and high uniformity. Next, the authors show seedless copper plating, resulting in a grid with a high aspect ratio and low metal fraction.

2) For M6 size double-sided silicon heterojunction devices with screen-printed silver electrodes and copper-plated electrodes, the authors obtained certified efficiencies of 25.98% and 26.41%, respectively. These results highlight the performance potential of silicon heterojunction technology and lower the barrier to entry for large-scale manufacturing.